| PART |
Description |
Maker |
| NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
| STA9K9.1P STA9K7.5P STA9K8.2P |
9000 WATTS PEAK PULSE POWE 7.5-100 VOLTS UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
|
Solid States Devices, Inc.
SSDI[Solid States Devices, Inc]
|
| UPD30100GC-40-9EU |
Transmitter; Package: PG-TSSOP-16; Frequency Band: 434.0 MHz 868.0 MHz; Channel Requirements per Band: Single Channel; Modulation Type: ASK / FSK; Transmit Power (at 3V): 10.0 dBm; Temperature Range: -40.0 - 125.0 °C 64位微处理
|
Ecliptek, Corp.
|
| NE5531079A-A NE5531079A-T1-A NE5531079A-T1A |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET LEAD FREE, 79A, 4 PIN
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
|
Duracell
Renesas Electronics Corporation
|
| CHV2243A |
Fully Integrated Q-band VCO based on Ku-band Oscillator and Q-band Multiplier
|
United Monolithic Semiconductors
|
| CLX27-10 CLX27 CLX27-00 CLX27-05 CLX27-10H |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Power-MESFET 伊雷尔X波段砷化镓功率场效应
|
INFINEON[Infineon Technologies AG]
|
| 2N5245L99Z |
N-Channel RF Amplifier VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92
|
Fairchild Semiconductor, Corp.
|
| SST5912T1 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
|
CALOGIC LLC
|
| SKY77912-21 |
Tx-Rx Front-End Module for Quad-Band GSM / GPRS / EDGE w/ 10 Linear TRx Switch Ports, Dual-Band TD-SCDMA, and TDD LTE Band 39
|
Skyworks Solutions Inc.
|
